Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors
نویسندگان
چکیده
منابع مشابه
Bias-stress-stable solution-processed oxide thin film transistors.
We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By p...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2020
ISSN: 2046-2069
DOI: 10.1039/d0ra05245k